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Journal Articles

Initial oxidation of Si(110) surface evaluated by photoemission spectroscopy and substrate-curvature measurements

Yamamoto, Yoshihisa*; Suzuki, Yasushi*; Miyamoto, Yu*; Bantaculo, R.*; Suemitsu, Maki*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito; Yamazaki, Tatsuya

Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.207 - 210, 2009/01

The bending of Si substrate has been measured optically in the oxidation of Si(110) surface and variation of curvature for (001) and (-110) directions have been evaluated. Furthermore, time evolutions of oxygen adsorption content and its chemical bonding states have been measured by photoemission spectroscopy to discuss inisotropy of the Si(110) oxidation in comjunction with substrate curvature measurements. Oxygen adsorption content was evaluated from O1s photoemission and chemical bonding states were evaluated from Si2p photoemission. O$$_{2}$$ gas pressure was ranging from 5.0$$times$$10$$^{-6}$$ Pa to 6.7$$times$$10$$^{-6}$$ and substrate temperature was 873 K. Compressive stress was detected in the (-110) direction. In turn, stretching stress was detected. The photoemission spectroscopy indicated that a layer-by-layer oxidation was not took place. The stretching stress in the (001) direction implies that oxidation of B-bonds which have components along the (001) direction takes place.

Oral presentation

Effects for Si oxidation mechanisms by carbon atoms in the SiO$$_{2}$$/Si(001) interface

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

no journal, , 

The oxidation kinetics of Si$$_{1-x}$$C$$_{x}$$ layer prepared with C$$_{2}$$H$$_{4}$$ exposure was observed by real-time XPS to investigate effects of substrate stress due to displacement of hetero atom on a p-type Si(001) surface. Experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. Oxidation rate on the Si$$_{1-x}$$C$$_{x}$$ layer was larger than that of a clean surface. It was found that carbon atoms diffused into substrate without CO or CO$$_{2}$$ desorption during oxidation. Furthermore "an unified Si oxidation reaction model mediated by point defect generation" could explain these results with correlation.

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